Improving Source-Drain Punch-Through Voltage in 2-μ m p-Well CMOS Process 2μmp阱CMOS工艺中提高源-漏穿通电压的方法
When the bias voltage was greater than the punch-through voltage, we found that the detector capacitance decreases with the increasing frequency, and increases with the increasing temperature. 当探测器两端的偏置电压大于穿通电压时,发现探测器的电容随着频率的增大而减小,随测试温度的升高而增大。
A novel IFO technology is proposed for high side thick gate oxide device to avoid punch-through breakdown induced by thin layer SOI back-gate effect. The technology includes a criterion of the punch-through breakdown and an implantation process for precise control of the punch-through breakdown voltage. 提出一种场氧离子注入IFO技术。该技术包含一个穿通击穿电压判据和一项注入工艺设计,可精确控制薄膜SOI背栅效应导致的高端厚栅氧器件的穿通击穿电压。